The E-SP8T-7681 is a GaAs Schottky diode MMIC single-pole 8-throw RF switch covering 76-81 GHz with 4.5-5 dB insertion loss, 20-25 dB isolation, and 22 dBm power handling for automotive radar and mmWave imaging applications.
E-Band SP8T RF Switch MMIC E-SP8T-7681
The E-SP8T-7681 is a GaAs Schottky diode MMIC single-pole 8-throw RF switch covering 76-81 GHz with 4.5-5 dB insertion loss, 20-25 dB isolation, and 22 dBm power handling for automotive radar and mmWave imaging applications.
Description
The E-SP8T-7681 is an 8-throw GaAs Schottky diode MMIC switch designed for the 76-81 GHz E-band, providing the multi-port switching capability needed for radar beam-switching, antenna selection, and test system channel routing at millimeter-wave frequencies. It achieves 4.5-5 dB insertion loss and 20-25 dB isolation with 22 dBm power handling, all in a compact bare-die form factor.
The device is controlled by analog voltages between -2 and +1.5 V (bias -1.2 to +0.8 V), enabling straightforward integration with standard radar control circuits. Its 50 Ohm impedance environment and gold-plated backside bare die format (4.2 x 3.38 x 0.10 mm) make it suitable for chip-on-board and multi-chip module integration in compact 77/79 GHz radar front-ends.
The E-SP8T-7681 is part of Arralis' Corvus E-band MMIC portfolio. It operates from -40C to +85C and is rated for commercial and space grades. Key applications include automotive long-range radar beam switching, mmWave security imaging systems, point-to-point E-band communications channel selection, medical imaging, and satellite earth observation radar systems.
Specifications
| Technology | GaAs Schottky Diode MMIC |
|---|---|
| Frequency | 76-81 GHz |
| Switch configuration | SP8T (single-pole 8-throw) |
| Insertion loss | 4.5-5 dB |
| Isolation | 20-25 dB |
| Power handling | 22 dBm |
| Bias voltage | -1.2 to +0.8 V |
| Package | Bare die, gold-plated backside |
| Die dimensions | 4.2 x 3.38 x 0.10 mm |
| Grade | Commercial, Space |
