Microwave p-i-n Elements
Glavkosmos
Uncased microwave p-i-n switching elements on thin membrane (>50 GHz, >50 V Vbr, 5 Ω Ron, 5–20 µm membrane) for AESA phase shifters in space/aviation systems.
Key figurescomparable across the catalogue
- TRL
- 7
Normalised to common units so this product can be compared with others in its category. The supplier's own wording is below.
As published by the supplier
- Purpose
- Discrete amplitude/phase control in AESA phase shifters for space-based location and communication systems
- Year of release
- 2013
- Application areas
- Aviation; space; radio engineering, electronics, microelectronics; civil industries
- Operating frequency
- >50 V
- Capacitance (vr=10 v, f=1 mhz), pf
- 0.001–0.015
- Forward loss resistance (id=10 ma, f=3–4 ghz), ω
- 5.0
- Constant forward voltage (id=5 ma)
- 0.9–1.1 V
- Reverse current (vr=30 v), µa
- 0.05–0.08
- Breakdown voltage (ir=10 µa)
- >50 V
- Semiconductor membrane thickness, µm
- 5–20
- Design
- Uncased, beam terminals, thin semiconductor/dielectric membrane
- TRL
- 7
About
The Microwave p-i-n Elements are uncased switching p-i-n elements with beam terminals based on thin semiconductor and dielectric membranes, designed for discrete amplitude and phase control in AESA discrete phase shifter modules of space-based location and communication systems. Operating frequency >50 GHz, capacitance (Vr=10 V, f=1 MHz) 0.001–0.015 pF, forward loss resistance (Id=10 mA, f=3–4 GHz) 5.0 Ω, forward voltage (Id=5 mA) 0.9–1.1 V, reverse current (Vr=30 V) 0.05–0.08 µA, breakdown voltage (Ir=10 µA) >50 V. Semiconductor membrane thickness 5–20 µm. Applications: aviation, space, radio engineering, microelectronics. Released 2013.
Documentation
No public datasheet yet — request the datasheet / ICD from the supplier.