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Solar Element GaInP2 / GaAs / Ge

Glavkosmos
Solar Element GaInP2 / GaAs / Ge

Triple-junction GaInP2/GaAs/Ge solar cell for spacecraft power systems, 28.5% efficiency, flight-proven.

Technical specifications

Purpose
Solar power supply system cells for spacecraft, converting solar energy to electricity
Year of release
2007
Estimated production/delivery time
1 month
Flight qualification
Flight-qualified
Customization
Cell area (4–60.3 mm²) and contact design customizable on request
Efficiency
28.5%
Current
500 mA
Voltage at maximum power (Ump)
2.371 V
Maximum power density
381 W/m²
Thickness
0.09 / 0.11 / 0.14 mm
Dimensions (L × W)
80 × 40 mm (standard)
TRL
9 (flight-proven)

About

The Solar Element GaInP2/GaAs/Ge is a triple-junction semiconductor solar cell for use in solar power supply systems of spacecraft to convert solar energy into electrical energy. It offers 28.5% efficiency and can be delivered in standard 80 × 40 mm format in three thicknesses (0.09, 0.11, or 0.14 mm). The cell dimensions and contact system design can be modified on customer request (area from 4 mm² to 60.3 mm²). Released in 2007 with a 1-month delivery lead time and established flight heritage.

Documentation

No public datasheet yet — request the datasheet / ICD from the supplier.

Source: trade.glavkosmos.com ↗