Solar Element GaInP2 / GaAs / Ge
Glavkosmos
This is a triple-junction solar cell (GaInP2 / GaAs / Ge) designed for spacecraft solar power systems, converting solar energy into electrical power.
Key figurescomparable across the catalogue
- Power
- 381 W
- Largest dimension
- 80 mm
- Lead time
- 1 months
- TRL
- 9
Normalised to common units so this product can be compared with others in its category. The supplier's own wording is below.
As published by the supplier
- Purpose
- Utilization in battery design of solar power supply systems of spacecraft to convert solar energy into electrical.
- Year of release
- 2007
- Lead time
- 1 months
- Flight qualification of the product
- Yes
- Possibility to adapt the product to customer requirements
- Yes
- Efficiency factor
- 28.5 %
- Current
- 500 mA
- Voltage at maximum power, ump
- 2,371 V
- Maximum power, pmp
- 381 W / m²
- Thickness
- 0.09 / 0.11 / 0.14 mm
- Dimensions l x w
- 80 × 40 mm
About
The Solar Element GaInP2 / GaAs / Ge is a semiconductor structure intended for use in the battery design of solar power supply systems for spacecraft. Its primary purpose is to convert solar energy into electrical energy. Released in 2007, the product has flight qualification and can be adapted to customer requirements. Key features include a high efficiency factor of 28.5%, a current of 500 mA, and a voltage at maximum power (Ump) of 2.371 V. It delivers a maximum power (Pmp) of 381 W/m². The element is available in various thicknesses (0.09 mm, 0.11 mm, 0.14 mm) and has standard dimensions of 80 x 40 mm. The size of the photoelectric converter (ranging from 4 mm² to 60.3 mm²) and the design of the contact system can be customized upon customer request.
Documentation
No public datasheet yet — request the datasheet / ICD from the supplier.