QJ 4G32-Advanced Space Solar Cell (4×8)
32% class quadruple-junction AlInGaP/AlInGaAs/InGaAs/Ge cell of 30.60 cm2 with 31.3% BOL efficiency and 3.3 g mass.
Typed specifications35 values
Discloses 6 of 7 fields engineers filter by in this category (category median 2).
- Mass
- 4.2 g Assembly · datasheet p.2 4.2 g assembly (CIC), average | 3.3 g bare cell, average
- Output power (BOL)
- 0.428 W BOL, 1367 W/m2, T=25°C · datasheet p.2
- Cell efficiency
- 31.2 % BOL, 1353 W/m2, 25°C, CIC · datasheet p.2 30.9 % BOL, 1367 W/m2, 25°C, CIC | 28.2 % cell, after 1E15 1 MeV e/cm2, 1367 W/m2 | 31.6 % cell, BOL, 1353 W/m2 | 31.3 % cell, BOL, 1367 W/m2 +3
- Envelope (L×W×H)
- 40.26 (± 0.1) x 80.26 (± 0.1) Assembly · datasheet p.2 40.26 (± 0.1) x 80.26 (± 0.1) assembly (CIC) outer dimensions | 40.08 (± 0.05) x 80.08 (± 0.05) bare cell outer dimensions | total device thickness of 330 µm Assembly
- TRL
- 9 datasheet p.1
- Array configuration
- solar cell assembly (CIC) bare cell and assembly (SCA / CIC) · datasheet p.1
- Cell type
- quad-junction AlInGaP/AlInGaAs/InGaAs/Ge · datasheet p.1
- Cell part number
- AZUR SPACE 4G32C-Advanced bare cell (P/N 82921) / 4G32A-Advanced assembly (P/N 82922) datasheet p.1
- Open-circuit voltage at the panel output (Voc)
- 3.42 V BOL, T=25°C · datasheet p.2 3.42 V cell and CIC, BOL, AM0 1367 W/m2, T = 25°C
- Max-power voltage at the panel output (Vmp)
- 3.02 V BOL, T=25°C · datasheet p.2 3.02 V cell and CIC, BOL, AM0 1367 W/m2, T = 25°C
- Integrated devices
- bypass diodes assembly (CIC) · datasheet p.1
- Flight heritage
- in-orbit TRL-9 level datasheet p.1
- Max-power current (Imp)
- 0.433 A bare cell, BOL, AM0 1367 W/m2, T = 25°C · datasheet p.2 0.428 A BOL, T=25°C | 0.428 A CIC, BOL, AM0 1367 W/m2, T = 25°C
- Short-circuit current (Isc)
- 0.45 A bare cell, BOL, AM0 1367 W/m2, T = 25°C · datasheet p.2 0.445 A CIC, BOL, AM0 1367 W/m2, T = 25°C
- Cell area
- 30.6 cm² bare cell · datasheet p.2
- Coverglass thickness
- 100 µm CIC, AR coated · datasheet p.2
- Bypass diodes
- per cell corner-mounted Si bypass diode on assembly (CIC) · datasheet p.1
- Power temperature coefficient
- -8.4 %/°C datasheet p.2
Each value is typed with its unit and measurement condition and cites the datasheet page it was taken from. Nothing is guessed: a field that is absent here has not been published by the manufacturer. machine-extracted ✓ checked by NewSpace Market ✓ manufacturer confirmed by the manufacturer.
As published by the supplier12 lines, in the manufacturer's own wording
- Part numbers
- 82921 (bare cell) / 82922 (assembly)
- Base material
- AlInGaP/AlInGaAs/InGaAs/Ge on Ge
- Outer dimensions
- 40.08 x 80.08 mm (bare cell) / 40.26 x 80.26 mm (assembly)
- Cell area
- 30.60 cm2 (glassed area 31.34 cm2)
- Average weight
- 3.3 g bare cell (<= 109 mg/cm2) / 4.2 g assembly (<= 139 mg/cm2)
- Thickness
- 195 +/- 25 um bare cell / 330 +/- 50 um assembly
- Coverglass
- 100 um AR coated
- BOL efficiency at 1367 w/m2
- 31.3% cell / 30.9% CIC
- BOL voc
- 3415 mV
- BOL isc
- 450 mA cell / 445 mA CIC
- BOL vmp / imp
- 3015 mV / 433 mA (cell)
- Efficiency after 1e15 e/cm2
- 28.2% cell / 27.8% CIC (1367 W/m2)
About
AZUR SPACE’s 4G32 solar cells and solar cell assemblies (CIC / SCA) are the ideal solution for space power applications that need to reach the highest power levels on small areas and at low weight. This device offers best-in-class BOL and EOL performance and exceptionally high voltage, enabling a multitude of options and missions.
The cell is a quadruple-junction AlInGaP/AlInGaAs/InGaAs/Ge device on a germanium substrate providing 32% class efficiency, and includes AZUR SPACE’s proprietary radiation-hardened design for best EOL performance.
The assembly adds a bypass diode, welded interconnectors and a 100 micrometre AR coated coverglass. This is the standard thickness device variant in the 4 cm x 8 cm format.
Documentation
Need the full ICD, test reports or a specific revision? Ask the supplier directly.