HARDWARE / PRODUCTAdded 30 Jul 2026

QJ 4G32-Advanced Space Solar Cell (4×8)

AZUR SPACE
QJ 4G32-Advanced Space Solar Cell (4×8)

32% class quadruple-junction AlInGaP/AlInGaAs/InGaAs/Ge cell of 30.60 cm2 with 31.3% BOL efficiency and 3.3 g mass.

Typed specifications35 values

Discloses 6 of 7 fields engineers filter by in this category (category median 2).

Mass
4.2 g
Assembly · datasheet p.2 4.2 g assembly (CIC), average  |  3.3 g bare cell, average
Output power (BOL)
0.428 W
BOL, 1367 W/m2, T=25°C · datasheet p.2
Cell efficiency
31.2 %
BOL, 1353 W/m2, 25°C, CIC · datasheet p.2 30.9 % BOL, 1367 W/m2, 25°C, CIC  |  28.2 % cell, after 1E15 1 MeV e/cm2, 1367 W/m2  |  31.6 % cell, BOL, 1353 W/m2  |  31.3 % cell, BOL, 1367 W/m2  +3
Envelope (L×W×H)
40.26 (± 0.1) x 80.26 (± 0.1)
Assembly · datasheet p.2 40.26 (± 0.1) x 80.26 (± 0.1) assembly (CIC) outer dimensions  |  40.08 (± 0.05) x 80.08 (± 0.05) bare cell outer dimensions  |  total device thickness of 330 µm Assembly
TRL
9
datasheet p.1
Array configuration
solar cell assembly (CIC)
bare cell and assembly (SCA / CIC) · datasheet p.1
Cell type
quad-junction
AlInGaP/AlInGaAs/InGaAs/Ge · datasheet p.1
Cell part number
AZUR SPACE 4G32C-Advanced bare cell (P/N 82921) / 4G32A-Advanced assembly (P/N 82922)
datasheet p.1
Open-circuit voltage at the panel output (Voc)
3.42 V
BOL, T=25°C · datasheet p.2 3.42 V cell and CIC, BOL, AM0 1367 W/m2, T = 25°C
Max-power voltage at the panel output (Vmp)
3.02 V
BOL, T=25°C · datasheet p.2 3.02 V cell and CIC, BOL, AM0 1367 W/m2, T = 25°C
Integrated devices
bypass diodes
assembly (CIC) · datasheet p.1
Flight heritage
in-orbit TRL-9 level
datasheet p.1
Max-power current (Imp)
0.433 A
bare cell, BOL, AM0 1367 W/m2, T = 25°C · datasheet p.2 0.428 A BOL, T=25°C  |  0.428 A CIC, BOL, AM0 1367 W/m2, T = 25°C
Short-circuit current (Isc)
0.45 A
bare cell, BOL, AM0 1367 W/m2, T = 25°C · datasheet p.2 0.445 A CIC, BOL, AM0 1367 W/m2, T = 25°C
Cell area
30.6 cm²
bare cell · datasheet p.2
Coverglass thickness
100 µm
CIC, AR coated · datasheet p.2
Bypass diodes
per cell
corner-mounted Si bypass diode on assembly (CIC) · datasheet p.1
Power temperature coefficient
-8.4 %/°C
datasheet p.2

Each value is typed with its unit and measurement condition and cites the datasheet page it was taken from. Nothing is guessed: a field that is absent here has not been published by the manufacturer. machine-extracted ✓ checked by NewSpace Market ✓ manufacturer confirmed by the manufacturer.

As published by the supplier12 lines, in the manufacturer's own wording
Part numbers
82921 (bare cell) / 82922 (assembly)
Base material
AlInGaP/AlInGaAs/InGaAs/Ge on Ge
Outer dimensions
40.08 x 80.08 mm (bare cell) / 40.26 x 80.26 mm (assembly)
Cell area
30.60 cm2 (glassed area 31.34 cm2)
Average weight
3.3 g bare cell (<= 109 mg/cm2) / 4.2 g assembly (<= 139 mg/cm2)
Thickness
195 +/- 25 um bare cell / 330 +/- 50 um assembly
Coverglass
100 um AR coated
BOL efficiency at 1367 w/m2
31.3% cell / 30.9% CIC
BOL voc
3415 mV
BOL isc
450 mA cell / 445 mA CIC
BOL vmp / imp
3015 mV / 433 mA (cell)
Efficiency after 1e15 e/cm2
28.2% cell / 27.8% CIC (1367 W/m2)

About

AZUR SPACE’s 4G32 solar cells and solar cell assemblies (CIC / SCA) are the ideal solution for space power applications that need to reach the highest power levels on small areas and at low weight. This device offers best-in-class BOL and EOL performance and exceptionally high voltage, enabling a multitude of options and missions.

The cell is a quadruple-junction AlInGaP/AlInGaAs/InGaAs/Ge device on a germanium substrate providing 32% class efficiency, and includes AZUR SPACE’s proprietary radiation-hardened design for best EOL performance.

The assembly adds a bypass diode, welded interconnectors and a 100 micrometre AR coated coverglass. This is the standard thickness device variant in the 4 cm x 8 cm format.

Documentation

Need the full ICD, test reports or a specific revision? Ask the supplier directly.

Source: www.azurspace.com ↗

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