TJ 3G30-Advanced Space Solar Cell (4×8)
AZUR SPACE
30% class triple-junction InGaP/GaAs/Ge bare cell and CIC assembly, 30.18 cm2, 29.5% BOL efficiency, 2.6 g bare cell.
Typed specifications61 values
Discloses 6 of 7 fields engineers filter by in this category (category median 2).
- Mass
- 2.6 g datasheet p.2 3.6 g assembly (CIC), average | 2.6 g bare cell, average | 3.6 g max · Assembly (SCA / CIC)
- Output power (BOL)
- 1.21 W BOL, 1367 W/m2 · datasheet p.2 1.2 W BOL, CIC
- Cell efficiency
- 29.8 % BOL, 1353 W/m2 · datasheet p.2 29.5 % BOL, 1367 W/m2 | 26.2 % cell, after 1E15 1 MeV e/cm2, 1367 W/m2 | 29.8 % cell, BOL, 1353 W/m2 | 29.5 % cell, BOL, 1367 W/m2 +3
- Envelope (L×W×H)
- 40.00 (± 0.1) x 80.00 (± 0.1) datasheet p.2 40.15 (± 0.05) x 80.15 (± 0.05) assembly (CIC) outer dimensions | 40.00 (± 0.1) x 80.00 (± 0.1) bare cell outer dimensions
- TRL
- 9 datasheet p.1
- Array configuration
- solar cell assembly (CIC) bare cell and assembly (SCA / CIC) · datasheet p.1
- Cell type
- triple-junction GaAs InGaP/GaAs/Ge · datasheet p.1 triple-junction GaAs
- Cell part number
- AZUR SPACE 3G30C-Advanced bare cell (P/N 81441) / 3G30A-Advanced assembly (P/N 81442) datasheet p.1
- Open-circuit voltage at the panel output (Voc)
- 2.52 V 1E15 · datasheet p.2 2.34 V 1E16 | 2.58 V 2.5E14 | 2.63 V 5E13 | 2.55 V 5E14 +2
- Max-power voltage at the panel output (Vmp)
- 2.23 V 1E15 · datasheet p.2 2.13 V 1E16 | 2.3 V 2.5E14 | 2.34 V 5E13 | 2.26 V 5E14 +2
- Integrated devices
- bypass diodes assembly (CIC) · datasheet p.1
- Flight heritage
- on-orbit TRL-9 level heritage datasheet p.1
- Max-power current (Imp)
- 0.484 A 1E15 · datasheet p.2 0.36 A 1E16 | 0.5 A 2.5E14 | 0.501 A 5E13 | 0.498 A 5E14 +3
- Short-circuit current (Isc)
- 0.501 A 1E15 · datasheet p.2 0.398 A 1E16 | 0.517 A 2.5E14 | 0.518 A 5E13 | 0.516 A 5E14 +2
- Cell area
- 30.18 cm² bare cell · datasheet p.2
- Coverglass thickness
- 100 µm CIC, AR coated · datasheet p.2
- Panel thickness
- 0.29 mm assembly · datasheet p.1 0.15 mm bare cell | 0.29 mm assembly | 0.15 mm bare cell
- Bypass diodes
- per cell corner-mounted Si bypass diode on assembly (CIC) · datasheet p.1
- Power temperature coefficient
- -6.2 %/°C datasheet p.2
Each value is typed with its unit and measurement condition and cites the datasheet page it was taken from. Nothing is guessed: a field that is absent here has not been published by the manufacturer. machine-extracted ✓ checked by NewSpace Market ✓ manufacturer confirmed by the manufacturer.
As published by the supplier15 lines, in the manufacturer's own wording
- Part numbers
- 81441 (bare cell) / 81442 (assembly)
- Base material
- InGaP/GaAs/Ge on Ge
- Ar coating
- TiO2/Al2O3
- Outer dimensions
- 40.00 x 80.00 mm (bare cell) / 40.15 x 80.15 mm (assembly)
- Cell area
- 30.18 cm2 (glassed area 31.13 cm2)
- Average weight
- 2.6 g bare cell (<= 86 mg/cm2) / 3.6 g assembly (<= 118 mg/cm2)
- Thickness
- 150 +/- 20 um bare cell / 290 +/- 50 um assembly
- Coverglass
- 100 um AR coated
- Contacts
- 2x front side pads plus diode pad (cell) / 3x interconnects (assembly)
- BOL efficiency at 1367 w/m2
- 29.5% cell / 29.2% CIC
- BOL voc
- 2700 mV
- BOL isc
- 520 mA cell / 515 mA CIC
- BOL vmp / imp
- 2411 mV / 504 mA (cell)
- Efficiency after 1e15 e/cm2
- 26.2% cell / 25.9% CIC (1367 W/m2)
- Qualification
- ECSS-E-ST-20-08C (Rev. 1); MRL-10 production; on-orbit TRL-9 heritage
About
AZUR SPACE’s 3G30-Advanced bare solar cells and solar cell assemblies (SCA), or CICs (cell-interconnect-coverglass), are the ideal solution for space power applications in conventional or in New Space segments. The award-winning 3G30-Advanced technology design offers proven best-in-class end-of-life (EOL) performance at lowest cost-per-watt, enabling a multitude of heritage options for all orbits and missions.
The bare cell device is a space-qualified InGaP/GaAs/Ge triple-junction solar cell originating from a germanium substrate and provides 30% class beginning-of-life (BOL) efficiency. This device includes AZUR SPACE’s proprietary radiation-hardened design for best EOL performance.
The assembly includes the bare 3G30C-Advanced solar cell, a corner-mounted silicon bypass diode, welded in-plane silver-coated Kovar interconnectors and a 100 micrometre AR coated coverglass bonded with space-grade heritage adhesive.
The 3G30-Advanced technology, cells and assemblies are ECSS-E-ST-20-08C (Rev. 1) qualified. These devices are produced in the mature MRL-10 Heilbronn facility and have demonstrated on-orbit TRL-9 level heritage. Other non-standard sizes, thicknesses and configurations are available on request.
Documentation
Need the full ICD, test reports or a specific revision? Ask the supplier directly.