TA1160
5500-8500 MHz, 20 W SISO GaN power amplifier for high power density, efficient C/X-band transmission.
Typed specifications42 values
Discloses 6 of 13 fields engineers filter by in this category (category median 3).
- Frequency band
- C TX · datasheet p.2
- Mass
- 482 g datasheet p.2 482 g 17 oz
- Frequency range
- 5 500 MHz Operating · datasheet p.2 5 500 MHz min · TX | 8 500 MHz max · TX | 5 500–8 500 MHz operating frequency
- Envelope (L×W×H)
- 152.4 x 63.5 x 27 datasheet p.2 152.4 x 63.5 x 27 L x W x H; 6 x 2.5 x 1.063 in
- TX RF output power
- 19.95 W nom. · saturated power output, CW sweep at design limit, typ. · datasheet p.2 2 W 64QAM Power Output, 20 MHz BW, -27 dB EVM Limit | 5.01 W BPSK Power Output, 20 MHz BW, -7 dB EVM Limit | 20 W headline rating | 19.95 W Saturated Power Output, CW Sweep at Design Limit +6
- Modulation
- 64QAM datasheet p.2 other any signal type and modulation format | BPSK
- Supply voltage
- 28 V nom. · typ. · datasheet p.2 12 V | 12 V min | 30 V max | 12–30 V supply voltage range
- Operating temperature
- -40 °C datasheet p.3 -40–85 °C housing temperature
- Function
- other SISO power amplifier (class AB GaN) · datasheet p.1
- Link use
- other military or commercial radio systems, unmanned systems, vehic… · datasheet p.1
- RF connector
- SMA Input / Output · datasheet p.3 SMA RF input, SMA-F | SMA RF output, SMA-F
- Connector
- Power/signal: DA7W2PA00LF (mating DA7W2SA00LF) datasheet p.3 DA7W2PA00LF Power / Signal | SMA-F / SMA-F RF Input / Output
- Survival temperature
- -55 °C datasheet p.3 -55–85 °C storage temperature
- RF gain
- 52.5 dB nom. · small signal gain, typ. · datasheet p.2 48 dB min · small signal gain
Each value is typed with its unit and measurement condition and cites the datasheet page it was taken from. Nothing is guessed: a field that is absent here has not been published by the manufacturer. machine-extracted ✓ checked by NewSpace Market ✓ manufacturer confirmed by the manufacturer.
As published by the supplier7 lines, in the manufacturer's own wording
- Frequency low
- 5500 MHz
- Frequency high
- 8500 MHz
- P1db dbm (Typ)
- 37
- Tx gain
- 52.5 dB
- Supply voltage (Vdc)
- 12-30
- Psat (Typ)
- 43
- Dimensions
- 6 x 2.5 x 1.063 in
About
The TA1160 SISO Power Amplifier is a class AB GaN module with an operating frequency range of 5500 to 8500 MHz. Designed for both military and commercial applications, this amplifier features an input voltage range of +12 to +30 VDC and a saturated RF output power of +43 dBm. With the capability of supporting any signal type and modulation format all in a low SWaP package, this unit is ideal for applications where high power density, efficiency, and linearity are key. Features: Over / Under / Reverse Voltage Protection, Temperature Monitor Output, Over-Temperature Protection, Forward Power Measurement. Applications: Military or Commercial Radio Systems, Unmanned Systems, Vehicle Systems, Aircraft Systems, Fixed Site Infrastructure.
Documentation
Need the full ICD, test reports or a specific revision? Ask the supplier directly.